tm FFPF20UA60DN 20 a, 600 v, ultrafast ll dual diode ?2010 fairchild semiconductor corporation FFPF20UA60DN rev. a www.fairchildsemi.com 1 FFPF20UA60DN features ? ultrafast recovery t rr = 120 ns (@ i f = 10 a) ? max forward voltage, v f = 2.3 v (@ t c = 25c) ? 600 v reverse voltage and high reliability ? avalanche energy rated ? rohs compliant applications ? boost diode in pfc and switching mode power supply 20 a, 600 v, ultrafast ll dual diode the FFPF20UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged uis capability. this device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. it is specially suited for use in switching power supplies and industrial applicationa as welder and ups application. absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics t c = 25 o c unless otherwise noted package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 25 o c 10 a i fsm non-repetitive peak surge current 60hz single half-sine wave 50 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 6.3 o c/w device marking device package reel size tape width quantity FFPF20UA60DN FFPF20UA60DN to-220f - - 50 to-220f 1 2 3 1. anode 2. cathode 3. anode 1 2 3 june 2010
FFPF20UA60DN 20 a, 600 v, ultrafast ll dual diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 10 a i f = 10 a t c = 25 o c t c = 125 o c - - 1.8 1.7 2.3 2.2 v i r 1 v r = 600v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 500 a t rr i rr q rr i f = 10 a, di/dt = 200 a/s t c = 25 o c 74 6 213 120 10 600 ns a nc w avl avalanche energy ( l = 40 mh) 10 - - mj test circuit and waveforms notes: 1: pulse: test pulse width = 300 s, duty cycle = 2% ?2010 fairchild semiconductor corporation FFPF20UA60DN rev. a
FFPF20UA60DN 20 a, 600 v, ultrafast ll dual diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop figure 2. typical reverse current vs. forward current vs. reverse voltage figure 3. typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery figure 6. forward current derating curve current vs. di/dt 100 200 300 400 500 600 0.01 0.1 1 10 100 1000 10000 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i r [ ] a ] reverse voltage, v r [v] 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 100 200 300 400 500 0 30 60 90 120 150 t c = 125 o c i f = 10a t c = 25 o c t c = 75 o c reverse recovery time, t rr [ns] di/dt [ a/ p s ] 0.1 1 10 100 0 10 20 30 40 capa c itances , cj [pf] typical capacitance at 0v = 36pf rever se voltage, v r [v] 100 200 300 400 0 3 6 9 12 t c = 75 o c i f = 10a t c = 25 o c t c = 125 o c reverse recovery current, i rr [a] di/dt [ a/ p s ] 25 50 75 100 125 150 0 2 4 6 8 10 12 average forward current, i f(av) [a] case temperature, t c [ o c ] ?2010 fairchild semiconductor corporation FFPF20UA60DN rev. a
FFPF20UA60DN 20 a, 600 v, ultrafast ll dual diode www.fairchildsemi.com 4 mechanical dimensions to220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20] 2.54typ [2.54 0.20] 0.50 +0.10
C0.05 dimensions in millimeters ?2010 fairchild semiconductor corporation FFPF20UA60DN rev. a
FFPF20UA60DN 20 a, 600 v, ultrafast ll dual diode www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation FFPF20UA60DN rev. a
|
